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Single crystal Sapphire possesses a unique combination of excellent optical, physical and chemical properties, the most useful is that it is the hardest of the oxide crystals. Sapphire maintains its strength even at high temperatures. It has good thermal properties, excellent electrical and dielectric properties, and is chemically resistant to common acids and alkali at temperatures up to 1000¡æ as well as to HF below 300¡æ.

Sapphire is anisotropic hexagonal crystal. Its properties depend on crystallographic direction (relative to the optical C-axis). Large sized sapphire crystals up to 4 inches in diameter are available in Rising EO. Rising EO¡¯s sapphire crystals are produced by two method¡ª¡ªTGT and Czochraski for the highest optical and substrate quality.

Transmission Curve See below
Crystallographic properties
Syngony
Hexagonal System
Crystal Form
Poly or Single Crystal
Lattice Constant, ?
7a=4.785, c=12.991
Cleavability
<1011>, <1012>, imperfect
Physical properties
Density, g/cm3 at 20 §à§³
3.98
Hardness, Mohs
9
Dielectric Constant 102-108 Hz at 298 K Parallel to c-axis (//)
Perpendicular to c-axis (¡ª )
10.55
8.6
Melting point, §à§³
2042
Thermal Conductivity, W/m¡¤K at at 300 K
Parallel to c-axis (//)
Perpendicular to c-axis (¡ª )
35.1
33.0
Thermal Expansion, 1/K at 298 K
Parallel to c-axis (//)
Perpendicular to c-axis (¡ª )
5.6 ¡Á 10-6
5.0 ¡Á 10-6
Specific Heat Capacity, W¡Ás/g/k
0.418
Bandgap, eV
9.9
Knoop Hardness, kg/mm2
1370
Young's Modulus, Gpa
335
Shear Modulus, GPan
148
Bulk Modulus, Gpa at 273 K
240
Poisson's Ratio
0.25
Elastic Coefficient
C11=496, C12=164, C13=115, C33=498, C44=148
Apparent Elastic Limit
275 MPa (13000psi)

Crystal properties
Crystal Growth Method
Czochralski or TGT
Maximum Size
<¦µ100mm
Optical properties
Transmission Range
0.15~5.5um
Reflection Loss, for two surfaces at 5 ¦Ìm
14%
dn/dt (@633nm), /K
13¡ä10-6
Refractive Index
See below
Wavelength (um)
No
Ne
Wavelength (um)
No
Ne
0.185
/
/
0.800
1.76013
1.7522
0.193
1.92879
1.91743
1.064
1.75449
1.74663
0.213
1.88903
1.87839
1.320
1.75009
1.74227
0.226
1.87017
1.85991
1.550
1.74618
1.73838
0.248
1.84696
1.83719
2.010
1.73748
1.72973
0.266
1.83304
1.82358
2.703
1.71900
1.71100
0.280
1.82437
1.81509
3.333
1.70100
1.69300
0.308
1.81096
1.80198
3.704
1.68700
1.67900
0.355
1.79598
1.78732
4.000
1.67400
1.66600
0.488
1.7753
1.76711
4.348
1.65800
1.65000
0.532
1.7717
1.76355
4.762
1.63600
1.62800
0.633
1.7659
1.75787
5.000
1.62300
1.61500
0.780
1.76068
1.75274
5.263
1.60700
1.59900

Chemical properties
Solubility in water at 20 §à§³, g/100cm3
98¡Á10-6
Solubility in acids
Soluble
Molecular Weight
101.94

Main Applications

These properties encourage the use of Sapphire in aggressive environments where reliability, optical transmission or strength is required. It is have the following wide applications in the range from the vacuum ultraviolet to the near infrared:

Optical applications:

Illumination windows
Sapphire light guides
LCD projector windows
Optical components

such as lenses, prisms, other laser and infrared optics

Medical applications:

Surgical tips
Endoscope lenses

Analytical applications:
Used in very high-pressure applications in replacement of glass or quartz tubes in NMR
Sapphire replaces quartz to improve durability and reduce contamination in mass spectroscopy

Aerospace applications:
Windows for sensors
Infrared Countermeasure lamps

Electronic applications: Sapphire substrate with different orientation has different applications:
1 (0001) Basal Plane Sapphire Substrate:
Epitaxial Gallium Nitride chip for blue LED
IR detector

2 (-1 1 0 2) R-Plane Sapphire Substrate:
GaAs wafer carriers
Microwave IC
SOS (Silicon on Sapphire)- High Speed IC
Pressure Transducer

3 (1 -1 2 0) A Plane Sapphire Substrate:
The growth of high Te superconductors

General Specifications

Optical Sapphire Windows
Chemical properties
Parameters
Commercial grade
Precision grade
Orientation
C-axis¡À1o, C-axis¡À0.5o, or any orientation as customers¡¯ request
Diameter Tolerance
+0/-0.10mm
Thickness Tolerance
¡À0.10mm
Clear Aperture
>Central 90% of diameter
Surface Quality
60-40 S/D
40-20 S/D
Parallelism
3~5 arc min
1 arc min
Surface Flatness
1¦Ë per 25mm
¦Ë/4
Chamfer
0.15~0.35mm¡Á45¡ã face width ¡Á 45¡ã¡À15¡ã
Coating
Coatings are available upon request

Epi-ready Sapphire Substrates
Parameters
Value
Diameter
50.8¡À0.05mm
76.2¡À0.05mm
Thickness
330-430¡À50¦Ì
380-480¡À50¦Ì
Orientation
C (0001) ¡À0.2o
A (1120) ¡À0.2o
R (1102) ¡À0.2o
C (0001) ¡À0.2o
A (1120) ¡À0.2o
R (1102) ¡À0.2o
TTV and Bow
<20um
<25um
Front Surface
Epi polished
Epi polished
Back Side
Lapped or polished
Lapped or polished
Flatness
<5um
<5um
Roughness (Ra)
<0.5um
<0.8um
 

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