Single crystal Sapphire
possesses a unique combination of excellent optical, physical
and chemical properties, the most useful is that it is the
hardest of the oxide crystals. Sapphire maintains its strength
even at high temperatures. It has good thermal properties,
excellent electrical and dielectric properties, and is chemically
resistant to common acids and alkali at temperatures up
to 1000¡æ as well as to HF below 300¡æ.
Sapphire is anisotropic hexagonal crystal. Its properties
depend on crystallographic direction (relative to the optical
C-axis). Large sized sapphire crystals up to 4 inches in
diameter are available in Rising EO. Rising EO¡¯s sapphire
crystals are produced by two method¡ª¡ªTGT and Czochraski
for the highest optical and substrate quality.
| Transmission Curve |
See below |
|
|
| Crystallographic properties |
| Syngony |
Hexagonal System |
| Crystal Form |
Poly or Single Crystal |
| Lattice Constant, ? |
7a=4.785, c=12.991 |
| Cleavability |
<1011>, <1012>, imperfect |
| Physical properties |
| Density, g/cm3 at 20 §à§³ |
3.98 |
| Hardness, Mohs |
9 |
Dielectric Constant 102-108 Hz at 298 K Parallel
to c-axis (//)
Perpendicular to c-axis (¡ª ) |
10.55
8.6 |
| Melting point, §à§³ |
2042 |
Thermal Conductivity, W/m¡¤K at at 300 K
Parallel to c-axis (//)
Perpendicular to c-axis (¡ª ) |
35.1
33.0 |
Thermal Expansion, 1/K at 298 K
Parallel to c-axis (//)
Perpendicular to c-axis (¡ª ) |
5.6 ¡Á 10-6
5.0 ¡Á 10-6 |
| Specific Heat Capacity, W¡Ás/g/k |
0.418 |
| Bandgap, eV |
9.9 |
| Knoop Hardness, kg/mm2 |
1370 |
| Young's Modulus, Gpa |
335 |
| Shear Modulus, GPan |
148 |
| Bulk Modulus, Gpa at 273 K |
240 |
| Poisson's Ratio |
0.25 |
| Elastic Coefficient |
C11=496, C12=164, C13=115, C33=498, C44=148 |
| Apparent Elastic Limit |
275 MPa (13000psi) |
| Crystal properties |
| Crystal Growth Method |
Czochralski or TGT |
| Maximum Size |
<¦µ100mm |
| Optical properties
|
| Transmission Range |
0.15~5.5um
|
| Reflection Loss, for two surfaces at 5 ¦Ìm |
14%
|
| dn/dt (@633nm), /K |
13¡ä10-6
|
| Refractive Index |
See below
|
| Wavelength (um) |
No |
Ne |
Wavelength (um) |
No |
Ne |
0.185 |
/ |
/ |
0.800 |
1.76013 |
1.7522 |
0.193 |
1.92879 |
1.91743 |
1.064 |
1.75449 |
1.74663 |
0.213 |
1.88903 |
1.87839 |
1.320 |
1.75009 |
1.74227 |
0.226 |
1.87017 |
1.85991 |
1.550
|
1.74618 |
1.73838 |
0.248 |
1.84696 |
1.83719 |
2.010 |
1.73748 |
1.72973 |
0.266 |
1.83304 |
1.82358 |
2.703 |
1.71900 |
1.71100 |
0.280
|
1.82437
|
1.81509 |
3.333 |
1.70100 |
1.69300 |
0.308
|
1.81096
|
1.80198 |
3.704 |
1.68700 |
1.67900 |
0.355
|
1.79598
|
1.78732
|
4.000 |
1.67400 |
1.66600 |
| 0.488 |
1.7753 |
1.76711
|
4.348 |
1.65800 |
1.65000 |
0.532 |
1.7717 |
1.76355 |
4.762 |
1.63600 |
1.62800 |
0.633 |
1.7659 |
1.75787 |
5.000 |
1.62300 |
1.61500 |
0.780 |
1.76068
|
1.75274 |
5.263 |
1.60700 |
1.59900 |
| Chemical properties |
| Solubility in water at 20 §à§³, g/100cm3 |
98¡Á10-6 |
| Solubility in acids |
Soluble |
| Molecular Weight |
101.94 |
Main Applications
These properties encourage the use of Sapphire in aggressive
environments where reliability, optical transmission or
strength is required. It is have the following wide applications
in the range from the vacuum ultraviolet to the near infrared:
Optical applications:
Illumination windows
Sapphire light guides
LCD projector windows
Optical components
such as lenses, prisms, other laser and infrared optics
Medical applications:
Surgical tips
Endoscope lenses
Analytical applications:
Used in very high-pressure applications in replacement of
glass or quartz tubes in NMR
Sapphire replaces quartz to improve durability and reduce
contamination in mass spectroscopy
Aerospace applications:
Windows for sensors
Infrared Countermeasure lamps
Electronic applications: Sapphire substrate with different
orientation has different applications:
1 (0001) Basal Plane Sapphire Substrate:
Epitaxial Gallium Nitride chip for
blue LED
IR detector
2 (-1 1 0 2) R-Plane Sapphire Substrate:
GaAs wafer carriers
Microwave IC
SOS (Silicon on Sapphire)- High Speed
IC
Pressure Transducer
3 (1 -1 2 0) A Plane Sapphire Substrate:
The growth of high Te superconductors
General Specifications
| Optical Sapphire Windows |
| Chemical properties |
| Parameters |
Commercial grade |
Precision grade |
| Orientation |
C-axis¡À1o, C-axis¡À0.5o, or any orientation
as customers¡¯ request
|
| Diameter Tolerance |
+0/-0.10mm
|
| Thickness Tolerance |
¡À0.10mm
|
| Clear Aperture |
>Central 90% of diameter
|
| Surface Quality |
60-40 S/D |
40-20 S/D |
| Parallelism |
3~5 arc min |
1 arc min |
| Surface Flatness |
1¦Ë per 25mm |
¦Ë/4 |
| Chamfer |
0.15~0.35mm¡Á45¡ã face width ¡Á 45¡ã¡À15¡ã
|
| Coating |
Coatings are available upon request
|
| Epi-ready Sapphire Substrates |
| Parameters |
Value |
| Diameter |
50.8¡À0.05mm |
76.2¡À0.05mm |
| Thickness |
330-430¡À50¦Ì |
380-480¡À50¦Ì |
| Orientation |
C (0001) ¡À0.2o
A (1120) ¡À0.2o
R (1102) ¡À0.2o |
C (0001) ¡À0.2o
A (1120) ¡À0.2o
R (1102) ¡À0.2o |
| TTV and Bow |
<20um |
<25um |
| Front Surface |
Epi polished |
Epi polished |
| Back Side |
Lapped or polished |
Lapped or polished |
| Flatness |
<5um |
<5um |
| Roughness (Ra) |
<0.5um |
<0.8um |
|
|