Usually we are handling Silicon monocrystalline, CZ and FZ, optical and mirror grade.

Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (p-type) and phosphorus (n-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.

CZ Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5 - 8 micron region. The strong absorption band at 9 microns makes it unsuitable for CO2 laser transmission applications, but it is frequently used for laser mirrors because of its high thermal conductivity and low density. Application as window, lens in the 1.5 - 8 μm region; Mirror for CO2 laser and spectrometer applications.

Si Mirror grade
Any dopant, any conductivity, any orientation, not warranted with respect to transmission, suitable for mirror substrates.

Si Optical grade
CZ, P type doped with Boron, <111> or <100>, Resistivity 5 - 40 ohmcm
FZ, N type doped with Phosphorus, <111>, Resistivity > 50, preferably > 500 ohmcm, the absorption at 9 microns is absent.

Also we produced Silicon wafers according customers specifications, these substrates can be used in the semiconductor production.

We can offer services like lapping, cutting, grinding, polishing, double-side polishing.

Main Properties

Transmission Curve	See below
Crystallographic properties
Syngony	Cubic
Lattice Constant, A	5.43
Physical properties
Density	2.33g/cm3
Hardness, Mohs	7
Dielectric Constant for 9.37 x 109 Hz	13
Melting point, оС	1414
Thermal Conductivity, W/m·K at 313 K	163
Thermal Expansion, 1/K at 293 K	2.6x10-6
Specific Heat Capacity, J/(kg?°C)	712.8
Bandgap, eV	1.1
Knoop Hardness, kg/mm2	1100
Young's Modulus, Gpa	130.91
Shear Modulus, GPan	79.92
Bulk Modulus, GPa	101.97
Debye Temperature, K	640
Poisson's Ratio	0.28

General Specifications